Manufacturable Tri-Stack AlSb/InAs HEMT Low-Noise Amplifiers Using Wafer-Level-Packaging Technology for Light-Weight and Ultralow-Power Applications

Abstract

A wafer-level-packaging technology was used to integrate the 0.1 m AlSb/InAs HEMT low-noise amplifiers with power amplifiers, switches and phase shifters to form a compact tri-stack transmit/receive module for light-weight and ultralow-power applications. The high manufacturability of AlSb/InAs HEMT receivers operating at 0.9 mW was demonstrated on a tri-stack wafer. This demonstration of manufacturable tri-stack transmit/receive modules is essential for phased-array applications requiring light weight and ultralow power.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2009
Accession Number
ADA553386

Entities

People

  • Chia‐Hsien Lin
  • Jeremy Yang
  • K. Hennig
  • L. S. Lee
  • M. D. Lange
  • M. R. Parlee
  • M. Y. Nishimoto
  • P. Chang-chien
  • X. Zeng
  • Y. C. Chou

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Arrays
  • Electron Mobility
  • Electrons
  • Frequency
  • High Electron Mobility Transistors
  • Integrated Circuits
  • Low Noise
  • Low Noise Amplifiers
  • Low Temperature
  • Microwave Integrated Circuits
  • Monolithic Microwave Integrated Circuits
  • Noise
  • Phased Arrays
  • Power Amplifiers
  • Radio Frequency
  • X-Ray Computed Tomography

Readers

  • Integrated Circuit Design and Technology.