DC Characteristics of InAs/AlSb HEMTs at Cryogenic Temperatures

Abstract

The Direct Current (DC) properties of 110-nm gate-length InAs/AlSb-based high electron mobility transistors (HEMTs) at cryogenic (30K) and room temperature (300K) were investigated. Compared to 300K, devices at 30K exhibited lower on-resistance (R (sub ON)) and output conductance (g (sub DS)), a higher transconductance (g sub m)), and a more distinct knee in the I (sub DS)(V (sub DS)) characteristics. The improvement in the DC performance at cryogenic temperature should mainly be attributed to the lower source-drain resistance.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2009
Accession Number
ADA553698

Entities

People

  • A. Noudeviwa
  • Audrey Olivier
  • E. Lefebvre
  • G. Moschetti
  • J. Grahn
  • M. Malmkvist
  • N. Wadefalk
  • P.-a. Nilsson
  • S. Bollaert
  • Y. Roelens

Organizations

  • Chalmers University of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Citric Acid
  • Dry Etching
  • Electron Beams
  • Electron Microscopy
  • Electronics
  • Electronics Laboratories
  • Fabrication
  • Low Noise
  • Low Noise Amplifiers
  • Measurement
  • Metal-Semiconductor Junctions
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Resistance
  • Scanning Electron Microscopy
  • Transconductance
  • Transmission Lines

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics