CdTe Photovoltaic Devices for Solar Cell Applications
Abstract
Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cells because of its near optimum bandgap of approx. 1.5 eV and high absorption coefficient. The energy gap is near optimum for a single junction solar cell and the high absorption coefficient allows films as thin as 2 microns to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 17% have been produced for poly-CdTe materials. By alloying with mercury telluride (HgTe), Hg1-xCdxTe(0 is less than or equal to x less than or equal to 1) alloy can be obtained with a bandgap energy that falls between the end points of HgTe (E(g) = -0.3 eV) and CdTe (E(g) =1.5 eV). Because of its bandgap tunability with the Cd composition, Hg(1-x)Cd(x)Te alloy has evolved to become the most important/versatile material for detector applications over the entire infrared wavelength range and has gained traction in the solar cell community.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 2011
- Accession Number
- ADA553808
Entities
People
- Priyalal Wijewarnasuriya
Organizations
- United States Army Research Laboratory