Device Quality Sb-Based Compound Semiconductor Surface: A Comparative Study of Chemical Cleaning
Abstract
We have studied the surface cleaning of Sb-based compound semiconductors using HF, NH4OH, and HCl cleans and the metal oxide semiconductor (MOS) capacitors fabricated subsequently. GaSb, InGaSb, and AlGaSb surfaces are investigated using low-energy radiation from the synchrotron. Capacitance voltage (C V) and photoluminescence measurements are carried out on capacitors made with Al2O3 from atomic layer deposition and corroborated with the results from synchrotron spectroscopy. Excellent C V characteristics with a mid-band-gap interface state density of 3 1011/cm2eV are obtained on samples with the HCl clean. This is consistent with the finding that only the HCl acid clean is able to remove the native oxides present on GaSb and InGaSb surfaces, and produce clean and stable surfaces suitable for MOSFET development. Complete removal of AlOx on the AlGaSb surface was not possible using chemical cleaning. Termination of AlGaSb with two monolayers of GaSb is proposed as a solution
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2011
- Accession Number
- ADA554770
Entities
People
- Aneesh Nainani
- Brian R. Bennett
- J. B. Boos
- Krishna C. Saraswat
- Masaharu Kobayashi
- Piero Pianetta
- Toshifumi Irisawa
- Yun Sun
- Ze Yuan
Organizations
- Stanford University