Experimental Determination of Quantum and Centroid Capacitance in Arsenide-Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect

Abstract

Experimental gate capacitance (Cg ) versus gate voltage data for InAs0.8Sb0.2 quantum-well MOSFET (QWMOSFET) is analyzed using a physics-based analytical model to obtain the quantum capacitance (CQ) and centroid capacitance (Ccent). The nonparabolic electronic band structure of the InAs0.8Sb0.2 QW is incorporated in the model. The effective mass extracted from Shubnikov?de Haas magnetotransport measurements is in excellent agreement with that extracted from capacitance measurements. Our analysis confirms that in the operational range of InAs0.8Sb0.2 QW-MOSFETs, quantization and nonparabolicity in the QW enhance CQ and C(cent). Our quantitative model also provides an accurate estimate of the various contributing factors toward Cg scaling in future arsenide?antimonide MOSFETs.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2011
Accession Number
ADA554794

Entities

People

  • Ashish Agrawal
  • Ashkar Ali
  • Brian R. Bennett
  • Himanshu Madan
  • J. B. Boos
  • Peter Schiffer
  • Rajiv Misra
  • Suman Datta

Organizations

  • Pennsylvania State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antimonides
  • Band Structures
  • Charge Density
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Energy Levels
  • Equivalent Circuits
  • Fermi Levels
  • Heterojunctions
  • Low Temperature
  • Magnetic Fields
  • Measurement
  • Physical Properties
  • Quantum Wells
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing