Molecular Beam Epitaxial Regrowth of Antimonide-Based Semiconductors

Abstract

We have investigated regrowth of p+ InGaSb on AlGaSb and on thin InAs etch-stop layers after atomic hydrogen cleaning (AHC) surface treatments. Following certain cleaning conditions, the surface morphologies for In0.27Ga0.73Sb regrown on InAs exhibit smooth surfaces with similar root-mean-square (rms) roughness to the as-grown InAs, which in turn is similar to the roughness of the AlGaSb buffer layer below it. In addition, hole mobilities for InGaSb regrown on AHC InAs approach the highest mobilities reported to date for any p+ III V semiconductors. A wide range of AHC conditions including substrate temperatures from 280 deg C to 370 deg C and exposure durations between 5 min and 30 min result in smooth InGaSb films with low resistivity.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2011
Accession Number
ADA554815

Entities

People

  • Brian R. Bennett
  • Matthew Reason
  • Richard Magno
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

DTIC Thesaurus Topics

  • Antimonides
  • Electron Mobility
  • Electronics
  • Electronics Laboratories
  • Field Effect Transistors
  • Films
  • High Electron Mobility Transistors
  • Materials
  • Measurement
  • Military Research
  • Mobility
  • Molecular Beams
  • Roughness
  • Semiconductors
  • Surface Finishing
  • Surface Roughness
  • Transistors

Fields of Study

  • Materials science

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene