Antimonide-based pN Terahertz Mixer Diodes

Abstract

High frequency pN heterojunction diodes with cutoff frequencies over 1 THz have been fabricated using narrow bandgap high-mobility semiconductors. The pN heterojunction is composed of a 30 nm thick p-type In0.27Ga0.73Sb alloy and a 130 nm thick In0.69Al0.31As0.41Sb0.59 n-layer. A high-mobility n-type InAs0.66Sb0.34 contact layer is used to connect the mesa diode to a metal Ohmic contact. These alloys have a lattice constant a0=6.2 Angstroms and are grown on semi-insulating GaAs, a0=5.65 Angstroms, using a buffer consisting of 1 micron of In0.21Ga0.19Al0.6Sb with a0=6.2 Angstroms and 0.5 micron of Ga0.35Al0.65Sb with a0=6.12 Angstroms.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2011
Accession Number
ADA554818

Entities

People

  • Doewon Park
  • H. S. Newman
  • J. G. Champlain
  • Richard Magno

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antimonides
  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Electron Mobility
  • Electronics Laboratories
  • Energy Bands
  • High Electron Mobility Transistors
  • Local Oscillators
  • Materials
  • Metal-Semiconductor Junctions
  • Narrow Band Gap Semiconductors
  • Oscillators
  • Power Electronics
  • Semiconductors
  • Terahertz Radiation
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics