High-Frequency, 6.2 Angstrom pN Heterojunction Diodes

Abstract

Sb-based pN heterojunction diodes at 6.2 Angstroms consisting of narrow bandgap p-type In0.27Ga0.73Sb and wide bandgap n-type In0.69Al0.41As0.41Sb0.59, have been fabricated and measured. These diodes show excellent electrical characteristics with an ideality factor of 1.2 and high current density. S-parameter measurements and subsequent analysis show that these diodes have RC-cutoff frequencies over 1 THz, making these diodes excellent choices for high-frequency applications, such as sub-harmonic mixers for frequency conversion.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2012
Accession Number
ADA554822

Entities

People

  • Doewon Park
  • Harvey S. Newman
  • James G. Champlain
  • Richard Magno
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Electronics
  • Electronics Laboratories
  • Energy Bands
  • Frequency
  • Frequency Conversion
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Integrated Circuits
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Monolithic Microwave Integrated Circuits
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Semiconductor Device Technology