InxGa1-xSb Channel p-Metal-Oxide-Semiconductor Field Effect Transistors: Effect of Strain and Heterostructure Design

Abstract

InxGa1-xSb is an attractive candidate for high performance III-V p-metal-oxide-semiconductor field effect transistors (pMOSFETs) due to its high bulk hole mobility that can be further enhanced with the use of strain. We fabricate and study InxGa1-xSb-channel pMOSFETs with atomic layer deposition Al2O3 dielectric and self-aligned source/drain formed by ion implantation. The effects of strain and heterostructure design for enhancing transistor performance are studied systematically. Different amounts of biaxial compression are introduced during MBE growth, and the effect of uniaxial strain is studied using wafer-bending experiments. Both surface and buried channel MOSFET designs are investigated. Buried (surface) channel InxGa1-xSb pMOSFETs with peak hole mobility of 910 (620) sq cm/Vs and subthreshold swing of 120 mV/decade are demonstrated. Pulsed I-V measurements and low-temperature I-V measurements are used to investigate the physics in transistor characteristics.

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Document Details

Document Type
Technical Report
Publication Date
Jul 06, 2011
Accession Number
ADA554823

Entities

People

  • Aneesh Nainani
  • Brian R. Bennett
  • Krishna C. Saraswat
  • Mario G. Ancona
  • Matthew Reason
  • Ronaldd D. Schrimpf
  • Tejas Krishnamohan
  • Yoshio Nishi
  • Ze Yuan

Organizations

  • United States Naval Research Laboratory

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electron Mobility
  • Engineering
  • Field Effect Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Ion Implantation
  • Low Temperature
  • Materials
  • Measurement
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Metal-Oxide-Semiconductor Field-Effect Transistors
  • Oxides
  • Scattering
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics