Hole Mobility Enhancement in In0.41Ga0.59Sb Quantum-Well Field-Effect Transistors

Abstract

The impact of (110) unaxial strain on the characteristics of p-channel In0.41Ga0.59Sb quantum-well field-effect transistors (QW-FETs) is studied through chip-bending experiments. Uniaxial strain is found to affect the linear-regime drain current and the threshold voltage of the FET through the modulation of the hole mobility of the two-dimensional hole gas (DHG) in the QW-FET.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2011
Accession Number
ADA554835

Entities

People

  • Brian R. Bennett
  • J. B. Boos
  • Jesús A. del Alamo
  • Ling Xia
  • Mario G. Ancona

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electric Fields
  • Electronics Industry
  • Electronics Laboratories
  • Field Effect Transistors
  • Heterojunctions
  • Materials
  • Metal Oxide Semiconductors
  • Mobility
  • Physical Properties
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Stresses
  • Transistors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing