Physics Based Analysis of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for Radio Frequency (RF) Power and Gain Optimization

Abstract

The power and gain characteristics of a power radio-frequency (RF) gallium nitride (GaN) high electron mobility transistor (HEMT) were investigated by using drift-diffusion model simulations that were self consistently solved with the current-voltage (I-V) characteristics of the external circuit elements. The results showed the expected drop in gain with frequency, as the corresponding output power increases, can be modeled with device physics considerations. This technique can be used to optimize device performance by determining which part of the device to modify for greatest impact.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2011
Accession Number
ADA554911

Entities

People

  • Joe X. Qiu
  • Pankaj B. Shah

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Charge Carriers
  • Compound Semiconductors
  • Diffusion
  • Electron Mobility
  • Electrons
  • Elements
  • Frequency
  • Gallium
  • Gallium Nitrides
  • High Electron Mobility Transistors
  • Mobility
  • Radio Frequency
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Transistors

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Phased Array Antenna Design.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics