Development of 6.1 A Materials for IR Applications

Abstract

The development of mercury cadmium selenide (HgCdSe) material for infrared (IR) applications was initiated in fiscal year 2010 (FY10) at the U.S. Army Research Laboratory (ARL) under a Director s Research Initiative (DRI) program. Material growth conditions using molecular beam epitaxy (MBE) were identified to achieve reasonably good material quality in terms of surface morphology, defect density, and crystallinity as measured by x-ray diffraction. Additionally, it was determined that the bandgap of HgCdSe could be tuned by controlling the selenium (Se) to cadmium (Cd) flux ratio during growth. This research has continued in fiscal year 2011 (FY11) with an emphasis placed on developing composite substrate technology (zinc telluride [ZnTe]/silicon [Si] and Zn(Se)Te/gallium antimonide [GaSb]) for HgCdSe as well as understanding the electrical properties of HgCdSe material. An etching process was developed to identify dislocations in HgCdSe. Finally, the continued study of MBE growth parameters and their impact on material properties was conducted.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2011
Accession Number
ADA554913

Entities

People

  • Gregory Brill
  • Yuanping Chen

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Composite Materials
  • Compound Semiconductors
  • Crystal Structure
  • Diffraction
  • Dislocations
  • Electrical Properties
  • Electron Microscopy
  • Elements
  • Gallium Antimonides
  • Materials
  • Materials Science
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Defense Technology Research and Development.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics