Temperature Dependence of GaN HEMT Small Signal Parameters

Abstract

This study presents the temperature dependence of small signal parameters of GaN/SiC HEMTs across the 0-150 deg C range. The changes with temperature for transconductance (gm), output impedance (C(ds) and R(ds)), feedback capacitance (C(dg)), input capacitance (C(gs)), and gate resistance (R(g)) are measured. The variations with temperature are established for g(m), C(ds), R(ds), C(dg), C(gs), and R(g) in the GaN technology. This information is useful for MMIC designs.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2011
Accession Number
ADA556666

Entities

People

  • Ali M. Darwish
  • Amr A. Ibrahim
  • H. A. Hung

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Capacitance
  • Circuits
  • Efficiency
  • Electronics
  • Equivalent Circuits
  • Feedback
  • Impedance
  • Information Operations
  • Measurement
  • Microwaves
  • Military Research
  • Power
  • Radio Frequency Power
  • Resistance
  • Standards
  • Temperature Coefficients

Readers

  • Geospatial Intelligence and Artificial Intelligence Analytics
  • Semiconductor Device Technology