Visualizing Individual Nitrogen Dopants in Monolayer Graphene
Abstract
In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy, Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 19, 2011
- Accession Number
- ADA557751
Entities
People
- Carlos J. Arguello
- Christopher Gutiérrez
- Hui Zhou
- Keun S. Kim
- Kwang T. Rim
- Liuyan Zhao
- Lucia Palova
- Rui He
- S. P. Chockalingam
- Theanne Schiros
Organizations
- Columbia University