6.1 Angstrom II-VI and III-V Materials: A Platform for Photovoltaic and IR Device Applications
Abstract
Semiconductor materials and devices have experienced very rapid development in the past more than half a century. However, there still remains a lack of closely lattice-matched materials and substrates suitable for the grand integration of various kinds of optoelectronic devices such as photovoltaic, IR light emitting and imaging devices on a single chip. We have recently proposed a new material platform: the 6.1 II-VI (HgMgZnCd)(SeTe) and III-V (AlGaIn)(PAsSb) semiconductor materials lattice-matched to GaSb and InAs substrates. These materials have direct bandgaps covering a very broad energy spectrum from far IR (~0 eV) to UV (~3.4 eV). This feature is not achievable by any other known lattice-matched semiconductors on any commercially available substrates. Such a unique material platform enables new light emitting devices, multi-junction solar cells, multi-color photodetectors and FPAs, and facilitates monolithic integration of various materials without misfit dislocations to ensure the best quality for device applications. This talk will focus on the latest progress of the MBE growth of the materials and their potential device applications to ultra-high efficiency solar cells and IR photodetectors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 2011
- Accession Number
- ADA557837
Entities
People
- Yong-hang Zhang
Organizations
- University of Illinois Urbana–Champaign