Full-Scale Self-Emissive Blue and Green Microdisplays Based on GaN Micro-LED Arrays
Abstract
Micro-size light emitting diode (microLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a wide range of applications. If InGaN microLED arrays can be integrated on to Si complementary metal-oxide-semiconductor (CMOS) substrates for active driving, these devices could play crucial roles in ultra-portable products such as next generation pico-projectors, as well as in emerging fields such as biophotonics and optogenetics. Here we present a demonstration of, and methods for, creating a high resolution solid-state self-emissive microdisplay based on InGaN/GaN semiconductors. An energy efficient active drive scheme is accomplished by integrating micro-emitter arrays with CMOS active matrix drivers that are flip-chip bonded together via indium metal bumps.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2012
- Accession Number
- ADA557932
Entities
People
- Collin Bradford
- D. Y. Lie
- H. X. Jiang
- J. Day
- J. Y. Lin
- Jiang Li
Organizations
- United States Army Communications-Electronics Command