Influence of the Third Invariant in the Ballistic Impact of Silicon Carbide

Abstract

This report examines the dependence of the ballistic performance of silicon carbide on the third invariant of the stress tensor by use of numerical simulations and test data. The JHB ceramic model is modified to account for the influence of the third invariant, and the modification includes a material parameter defined as the ratio of yield in tri-axial extension to yield in tri-axial compression. Simulations of high-velocity impact are performed systematically with several values of the parameter to determine the influence of the third invariant. The simulation results are also compared to test data to determine the degree of influence that provide s the best agreement. Simulations include tensile and compressive plate-impact tests, long-rod penetration of prestressed targets, long-rod penetration of confined targets, long-rod penetration of unconfined targets, and ballistic impact of thin targets with substrates.

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Document Details

Document Type
Technical Report
Publication Date
Aug 06, 2010
Accession Number
ADA558330

Entities

People

  • Gordon Johnson
  • Stephen Beissel
  • Timothy J Holmquist

Organizations

  • Southwest Research Institute

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Agreements
  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Compression
  • Concrete
  • High Pressure
  • Impact Tests
  • Materials
  • Silicon
  • Silicon Carbide
  • Simulations
  • Strain Rate
  • Substrates
  • Technical Ceramics
  • Transitions
  • Yield Strength

Readers

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