Spin-Dependent Phenomena in Graphene

Abstract

Graphene is attractive for spintronics due to spin transport at room temperature with long spin diffusion lengths. During this grant period, two important aspects have been investigated: (1) Spin injection and transport in graphene, (2) Spin and charge transport in doped graphene. Main results include the first demonstration of tunneling spin injection into graphene, identification of contact effects as a major source of spin relaxation, realization of high spin injection efficiency, long spin lifetimes in bilayer graphene, the first in-situ transport study of transition metal doping of graphene including studies on graphene spin valves. These results have been at the forefront of graphene spintronics.

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Document Details

Document Type
Technical Report
Publication Date
Mar 15, 2012
Accession Number
ADA558583

Entities

People

  • Roland K Kawakami

Organizations

  • University of California Regents

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Coefficients
  • Detectors
  • Diffusion Coefficient
  • Electrical Properties
  • Electron Holes
  • Graphene
  • Low Temperature
  • Materials
  • Measurement
  • Metals
  • Quantum Properties
  • Resistance
  • Semiconductors
  • Spin-Orbit Interaction
  • Spintronics
  • Transition Metals

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene