Development of Direct Band Gap Group IV Semiconductors with the Incorporation of Sn

Abstract

Due to the indirect energy band of group IV materials of Si and Ge, these materials and their alloys can't be used to make optical devices. In this project, direct bandgap group IV alloy of GeSn alloy was developed. This report covers: (a) growth techniques of GeSn alloy with various Sn compositions, (b) characterization of the alloy, and (c) physical properties of the alloy and identification of direct optical transitions.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2012
Accession Number
ADA558773

Entities

People

  • Hung Hsiang Cheng

Organizations

  • National Taiwan University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Crystal Lattices
  • Electron Microscopy
  • Electronics
  • Energy Bands
  • Films
  • Light Sources
  • Low Temperature
  • Materials
  • Physical Properties
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Subatomic Particles
  • Thick Films
  • Transitions

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics