Electrical Spin Injection and Transport in Germanium (Preprint)

Abstract

We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance in n-type Ge is observable up to 225K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal magnetoresistance and the spin lifetime in n-type Ge is also investigated.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2011
Accession Number
ADA559202

Entities

People

  • Faxian Xiu
  • Inga A. Fischer
  • Joerg Schulze
  • Kang L. Wang
  • Li-te Chang
  • Michael Oehme
  • Minsheng Wang
  • Roland K Kawakami
  • Wei Han
  • Yi Zhou

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carrier Mobility
  • Charge Carriers
  • Complementary Metal-Oxide Semiconductors
  • Detection
  • Detectors
  • Electronics Industry
  • Electronics Laboratories
  • Field Effect Transistors
  • Germanium
  • Low Temperature
  • Magnetoresistance
  • Metal Oxide Semiconductors
  • Momentum
  • Scattering
  • Semiconductors
  • Solid State Physics
  • Transport Ships

Fields of Study

  • Physics

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology