Growth Optimization of YBa2NbO6 Buffer Layers (Postprint)

Abstract

The growth optimization of YBa2NbO6 (YBNO) buffer layers on LaAlO3 (100), MgO (100) single crystals, and IBAD MgO buffered Inconel substrates has been investigated. X-ray diffraction confirms the epitaxial growth of highly h00 oriented YBNO thin films on single crystal substrates and IBAD MgO buffered Inconel substrates. The best average surface roughness of the YBNO films deposited on buffered substrates is 2 nm. The critical temperature (Tc) of YBa2Cu3O7-x (Y-123) thin films deposited on these YBNO buffer layers ranges from 80 to 87 K. The deposition of YBNO may be further optimized and the IBAD MgO layers were only of sufficient quality to test for compatibility and epitaxial growth of the new buffer. Hence, the results presented here are preliminary in nature and can be improved upon.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 2012
Accession Number
ADA559214

Entities

People

  • I. Maartense
  • J. C. Tolliver
  • N. A. Yust
  • P. N. Arendt
  • Paul N. Barnes
  • Q. X. Jia
  • R. N. Nekkanti
  • S. Sathiraju
  • T. L. Campbell A. L.
  • Timothy J. Haugan

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Critical Temperature
  • Crystals
  • Diffraction
  • Epitaxial Growth
  • Films
  • Materials
  • Military Research
  • Optimization
  • Roughness
  • Single Crystals
  • Substrates
  • Surface Roughness
  • Thin Films
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Physics

Readers

  • Thin Film Deposition Science.