Center of Excellence for Battlefield Capability Enhancements: Envronmentally Stable Flexible Displays
Abstract
The focus of the Center is to develop and demonstrate novel materials, both for device structures that advance the state-of-the-art in flexible electronics, as well as for environmentally-stable, hybrid, organic/inorganic semiconductors, leading to robust luminescent devices for flexible displays for the U.S. soldier. Performance of transparent and conducting oxides of indium tin oxide and F-doped ZnO films on plastics and their stability under mechanical deformation were investigated. Thin film transistors (TFTs) with gallium tin zinc oxide (GSZO) channels, using the bottom gate configuration, were fabricated on thermally grown silicon dioxide on Si wafers. The best TFT electrical characteristics, with a threshold voltage of 4V and a drain current of 10-6A with an on/off current ratio as high as 10(exp 6), have been obtained on RT deposited channel layers, annealed subsequently in air at 250 deg C for 1 hr. on a 50 micron channel length and width. Inverted, hybrid organic light emitting diode structures that integrates inorganic and organic semiconductors layers were developed, with threshold voltage <6V, efficiency > 2cd/A with operating lifetimes >500 hours without encapsulation. Preliminary results on monolayer molecular functionalization of inorganic semiconductors and charge injection from inorganic to organic semiconductors have been shown.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 18, 2012
- Accession Number
- ADA559846
Entities
People
- Jay Lewis
- Shanthi Iyer
Organizations
- North Carolina Agricultural and Technical State University