Performance Improvement of Long-Wave Infrared InAs/GaSb Strained-Layer Superlattice Detectors Through Sulfur-Based Passivation

Abstract

We report on effective sulfur-based passivation treatments of type-II InAs/GaSb strained layer superlattice detectors (100% cut-off wavelength is 9.8 microns at 77 K). The electrical behavior of detectors passivated by electrochemical sulfur deposition (ECP) and thioacetamide (TAM) was evaluated for devices of various sizes. ECP passivated detectors with a perimeter-to-area ratio of 1600/cm exhibited superior performance with surface resistivity in excess of 10(exp 4) ohm cm, dark current density of 2.7 x 10(exp -3) A/sq cm, and specific detectivity improved by a factor of 5 compared to unpassivated devices (VBias = - 0.1 V, 77 K).

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2012
Accession Number
ADA560393

Entities

People

  • A. Rathi
  • E. A. Plis
  • E. H. Aifer
  • I. Vurgaftman
  • M. N. Kutty
  • S. Krishna
  • S. Myers

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Space

DTIC Thesaurus Topics

  • Atmospheric Temperature
  • Band Gaps
  • Crystal Structure
  • Current Density
  • Detection
  • Detectors
  • Diodes
  • Electron Microscopy
  • Electronic Mail
  • Energy Bands
  • Long-Wavelength Infrared Radiation
  • Materials
  • Quantum Efficiency
  • Radiation
  • Scanning Electron Microscopy
  • Semiconductors
  • Superlattices

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology