Free Carrier Induced Spectral Shift for GaAs Filled Metallic Hole Arrays

Abstract

For a GaAs filled metallic hole array on a pre-epi GaAs substrate, the free carriers, generated by three-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave (SPW) resonance, and the related second harmonic (SH) spectrum blue shifts with increasing fluence For the plasmonic structure on a substrate with surface defects, free carrier recombination dominates. The band gap emission spectral peak wavelength decreases 10-nm with increasing fluence, showing the transition from nonradiative-, at low excitation, to bimolecular-recombination at high carrier concentrations.

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Document Details

Document Type
Technical Report
Publication Date
Mar 13, 2012
Accession Number
ADA560598

Entities

People

  • Bin Xiang
  • Jingyu Zhang
  • Mansoor Sheik-bahae
  • Steven Brueck

Organizations

  • University of New Mexico

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Electromagnetic Fields
  • Electrons
  • Energy Bands
  • Excitation
  • Frequency
  • Laser Pulses
  • Materials
  • Optics
  • Refractive Index
  • Resonance
  • Spectra
  • Surface Plasmon Resonance

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Optical Physics and Photonics.
  • Semiconductor Device Technology