Pr Doped YBCO Films Produced by Pulsed Laser Deposition (Postprint)
Abstract
Pr doped YBa2Cu3O7-d targets with composition Y1-xPrxBa2Cu3O7-d where x = 0.0001, 0.001, 0.01, and 0.1 were prepared from oxide powders and used to deposit thin films by pulsed laser deposition using conditions previously optimized for pure YBa2Cu3O7-d. The Pr dopant was found to be dispersed throughout the film by secondary ion mass spectrometry and the doped films had an increased density of nanoparticles on the surface. The pinning force of the doped samples was found to decrease with increasing concentration of Pr; however, several concentrations displayed pinning forces that surpassed pure YBCO. At 0.01% Pr concentration, the doped film displayed a significant enhancement over pure YBa2Cu3O7-d for nearly the full range of 0-9 T. This study was conducted in order to determine a method of doping YBa2Cu3O7-d to achieve high in-field critical current densities while allowing the processing conditions to remain unchanged.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 2012
- Accession Number
- ADA560974
Entities
People
- B. C. Harrison
- Chakrapani V. Varanasi
- Frank Ramos
- Iman Maartense
- Joseph W. Kell
- Manisha V. Rane
- Paul N. Barnes
- Timothy J. Haugan
Organizations
- Air Force Research Laboratory