Solid State Recrystallization of Single Crystal Ce:LSO Scintillator Crystals for High Resolution Detectors
Abstract
Ce Lu2Si05 crystals were produced by solid state recrystalliastion (SSR). In this process an energetically metastable polycrystallim: matenal 1S plat:ed in contact with a s ingle crystal seed. Upon thennal proccssmg the primary grain grows due to the reduction in interfacial energy of the grain boundaries in the polycrystalline material. This study examined SSR of undoped Lu2Si05 over temperatures range 1400 ( - 1900 ( at times up to 50 hours. The recrystallization rate was negligible below 1700 C' and was only 0.28 microns/hr at 1750 C. The effect of adding up to 2% CaO and up to 2% MgO was studied over the same temperature range. At 1750 C. MgO doping at 2% was observed to increase the SSR rate of the primary crystal to 40 microns,hr while CaO doping at :!~o increased the SSR r.Jtc of the pnmary crystal to 20 mit:rons 'hr. CaO dopmg \\as observed to ha\ e an insignificant increase m grain size tor the ceramic matrix. Samples up to 3mm thick wen: produced using th1s approach. Experimental results were fit to a pan1bolk rate equation for both the primary grain and the polycrystallinc matnx.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2012
- Accession Number
- ADA561708
Entities
People
- Charles R. Shanta
- David W. Snyder