High-pressure CVD Growth of InN and Indium-rich Group III-nitride Compound Semiconductors for Novel Mid- and Far-infrared Detectors and Emitters
Abstract
During the grant period, the growth and optimization of InN and indium-rich In 1-xGaxN layers grown by HPCVD was explored at rector pressures up to 20 bar and at growth temperatures of 700 C - 900 C. The main emphasis was to evaluate rbe reactor pressure and growth temperature relation at which epitaxial InN and indium-rich [n 1-xOaxN layers can be stabilized. The results showed that for reactor pressures around 15bar, the potential InN growth temperatures is around 850 C, which is more than 200 C higher compared to low-pressure MOCVD. The growth above 15 bar was not successful due to carrier gas contamination problems caused in gas compression stage, an issue that has to be addressed in the next phase of the research program. The properties of InN and indium-rich In 1-xOaxN layers grown on Sapphire and OaN/Sapphire templates have been studied by x-ray diffraction, Raman, infrared reflec tance and transmission spectroscopy. The results obtained from Raman and IR reflectance measurements showed that single phase In l-xOaxN layers with (02 < x < 0.5) can be obtained. However, for higher gallium concentrations the FWHM values in the XRD Bragg reflexes become significant broader, indicating that further process improvements arc needed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 2010
- Accession Number
- ADA563163
Entities
People
- Nikolaus Dietz
Organizations
- Georgia State University