Lattice-Engineered Materials and Vertically-Integrated Multijunctions for Multi-Spectral Photodetectors
Abstract
This final report describes recently achieved advances in integrating infrared and visible band 111-V compound photodetectors to create a monolithic, vertically-integrated, high performance multispectral photodetector device in which multiple wavelength bands can be detected and distinguished simultaneously, without need for external bias control. To accomplish this new device architecture, novel heterostructures were designed and realized that utilize bandgap engineering to tune the sub-detector bandgaps and energy band offsets, coupled with substrate engineering via metamorphic grading of the lattice constant to control defect formation, within the InGaP-InGaAs materials systems. Specific novelties include the development of internal current blocking isolation layers so that a three-terminal configuration could be utilized and development of a novel overshoot and step-back layer to optimize strain relaxation within the lattice-mismatched device layers. The approach developed in this effort defines a rational materials path for future compact, high performance multispectral detectors based on material systems with tunable optical properties on a single substrate.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 14, 2010
- Accession Number
- ADA563602
Entities
People
- Steven A. Ringel
Organizations
- Ohio State University