Terahertz Speed Ballistic Circuits for Space Applications
Abstract
The technical objective of this research grant was to establish a new discipline that we call ballistic electronics. This means an electronic technology based upon nonlinear ballistic transport and phenomena that exist in nanodevices that have the critical dimension smaller than the carrier mean-free path. Our test devices are structured in 2-dimensional electron gas (2DEG) compound semiconductor heterostructures, thus, can operate our devices in the temperature range up to the room temperature. Our experiments confirmed that our new device called ballistic deflection transistor can operate at several hundreds of gigahertz frequency at room temperature even at transistor channels larger than mena free path. As a second major achievement of this project was that we demonstrated that the BDTs can be integrated into larger circuit blocks performing dedicated functions. This opens the door to larger functions1 integhration inot terahertz speed analog and digital processing. Details of different activities and achievements are presented in the attached files.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2012
- Accession Number
- ADA564722
Entities
People
- Martin Margala
Organizations
- University of Massachusetts Lowell