Self-Organized Quantum Dots for High-Performance Multi-Spectral Infrared Photodetectors
Abstract
This AFRL Nanotechnology Initiative program focused on uncovering and overcoming the fundamental limiting factors in realizing high performance self-assembled quantum dot (SAQD) based infrared photodetectors (QDIPs) in the mid-infrared (MIR,3 5 m) and/or long wavelength infrared (LWIR, 8 12 m) regime. This Final Technical Report summarizes the major accomplishments made in this program. The highlights include: (1) successful growth of extended defect-free multiple quantum dot (MQD) structures maintaining high intra- and layer-to-layer uniformity of the SAQDs, (2) analysis of electron occupancy in SAQDs and the potential profile in QDIP structures to guide doping optimization, (3) identification, characterization, and reduction of deep level traps existing in the MBE (molecular beam epitaxy)grown GaAs spacer layers by a factor of 20 and their impact on QDIP electrical characteristics, and (4) the design and implementation of resonant cavity-enhanced QDIP structures for QDIP performance enhancement by a factor of over ten.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 29, 2010
- Accession Number
- ADA564781
Entities
People
- A. Madhukar
- Gail J. Brown
- Joe C. Campbell
- Krishnamurthy Mahlingam
- Zhaoqiang Fang
Organizations
- University of Southern California