Connecting Dopant Bond Type with Electronic Structure in N-Doped Graphene

Abstract

Robust methods to tune the unique electronic properties of graphene by chemical modification are in great demand due to the potential of the two dimensional material to impact a range of device applications. Here we show that carbon and nitrogen core-level resonant X-ray spectroscopy is a sensitive probe of chemical bonding and electronic structure of chemical dopants introduced in single-sheet graphene films. In conjunction with density functional theory based calculations, we are able to obtain a detailed picture of bond types and electronic structure in graphene doped with nitrogen at the sub-percent level. We show that different N-bond types, including graphitic, pyridinic, and nitrilic, can exist in a single, dilutely N-doped graphene sheet. We show that these various bond types have profoundly different effects on the carrier concentration, indicating that control over the dopant bond type is a crucial requirement in advancing graphene electronics.

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Document Details

Document Type
Technical Report
Publication Date
Jun 29, 2012
Accession Number
ADA565181

Entities

People

  • Cherno Jaye
  • Christopher Gutiérrez
  • Dean M. DeLongchamp
  • Deborah Prezzi
  • Dennis Nordlund
  • Keun S. Kim
  • Liuyan Zhao
  • Lucia Palova
  • Theanne Schiros
  • Ulrich Wurstbauer

Organizations

  • Columbia University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Computational Chemistry Methods
  • Density Functional Theory
  • Electrons
  • Energy
  • Fermi Levels
  • Films
  • Graphene
  • Graphitic Materials
  • Linear Accelerators
  • Materials
  • Measurement
  • Spectroscopy
  • Two Dimensional
  • United States
  • Work Functions
  • X Ray Spectroscopy
  • X Rays

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Chemistry
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene