Black Silicon for Next-Generation Infrared Sensors

Abstract

Laser hyperdoped black silicon can be made by two different approaches, Similar properties, Flat black silicon easier to study Strong sub band gap absorption, High EQE out to 1200 nm, ARDEC seeks to extend strong device response to 1700 nm, Fundamental and practical questions abound.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2012
Accession Number
ADA567317

Entities

People

  • Jeffrey M. Warrender

Organizations

  • United States Army Armament Research, Development and Engineering Center

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors
  • Weapons Technologies

DTIC Thesaurus Topics

  • Absorption
  • Band Gaps
  • Conduction Bands
  • Demographic Cohorts
  • Detection
  • Detectors
  • Energy Bands
  • Group 16 Elements
  • Infrared Detectors
  • Lasers
  • Materials
  • Military Research
  • Photons
  • Precision-Guided Munitions
  • Pulsed Lasers
  • Quantum Efficiency
  • Valence Bands

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Spectroscopy.
  • Systems Analysis and Design

Technology Areas

  • Directed Energy