Minority Carrier Lifetime and Interfacial Recombination Velocity in GaAs/AlGaAs Double Heterostructures

Abstract

A novel technique is used to determine the minority carrier lifetimes, the interface recombination velocity, the internal radiative quantum efficiency, and the radiative recombination constant from PL decay measurements on a set of three samples and published theory. This technique is used to determine for the first time the minority carrier lifetimes of p-GaAs in double heterostructures that were grown by molecular beam epitaxy (MBE) at ARL. The results show the high quality of our bulk GaAs and the GaAs/AlGaAs interface in double heterostructure samples, and provide guidance for studies aimed at improving the quality of GaAs grown by MBE at the U.S. Army Research Laboratory (ARL).

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2012
Accession Number
ADA568046

Entities

People

  • B. Connelly
  • F. Towner
  • P. A. Folkes

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

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Fields of Study

  • Materials science

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  • Quantum Computing