MCT Detectors and ROICS for Various Format MWIR and LWIR Arrays

Abstract

Silicon ROICs for MCT LWIR (4x288, 6x576) and MWIR (128x128) diode matrix arrays were designed, manufactured and tested. MCT layers were grown by MBE technology on (013) GaAs substrates with CdTe/ZnTe buffer layers (lambda co = 11.2 + or - 0.15 microns at T = 78 K) and by LPE technology on (111) CdZnTe substrates with HWE passivation layer. The mean detectivity obtained e.g. for 4 x 288 FPAs at T = 78 K and background temperature Tb = 295 K was D*lambda approx. = 1.8 x 10(exp 11) cm/Hz(exp 1/2)/W with st. dev. of approx. 16.5 % (at FOV = 32 deg) and NEDT = 9.0 mK for the arrays tested and are close to the BLIP regime. NEDT measured for 128x128 FPA was about 20+ or - 8 mK.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 2009
Accession Number
ADA568701

Entities

People

  • Alexandr G. Golenkov
  • Fiodor F. Sizov
  • Ihor O. Lysiuk
  • S. A. Dvoretsky
  • Sergei V. Korinets
  • V. V. Vasiliev
  • Vladimir P. Reva
  • Vyacheslav V. Zabudsky
  • Yuriy P. Derkach

Organizations

  • National Academy of Sciences of Ukraine

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Abstracts
  • Amplifiers
  • Arrays
  • Charge Coupled Devices
  • Complementary Metal-Oxide Semiconductors
  • Detectors
  • Diodes
  • Dynamic Range
  • Linear Arrays
  • Metal Oxide Semiconductors
  • Modules (Electronics)
  • Scanning
  • Semiconductor Devices
  • Semiconductor Physics
  • Semiconductors
  • Standards
  • Transistors

Fields of Study

  • Materials science

Readers

  • Image Processing and Computer Vision.
  • Semiconductor Device Technology