Distributed Amplifier Monolithic Microwave Integrated Circuit (MMIC) Design

Abstract

A very broadband distributed amplifier was designed using a 0.13-micrometer gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) process from TriQuint Semiconductor. The design and fabrication of this circuit was performed as part of the fall 2011 Johns Hopkins University Monolithic Microwave Integrated Circuit (MMIC) Design Course, taught by the author. The design approach is applicable to very broadband, low noise MMICs that could be used for a variety of radio frequency (RF) and microwave systems.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 2012
Accession Number
ADA570161

Entities

People

  • John E. Penn

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Electronic Warfare
  • Sensors

DTIC Thesaurus Topics

  • 5G Wireless Networks
  • Amplifiers
  • Bandwidth
  • Broadband
  • Circuits
  • Distributed Amplifiers
  • Electron Mobility
  • Electrons
  • Elements
  • Frequency
  • Gallium Arsenides
  • High Electron Mobility Transistors
  • Integrated Circuits
  • Microwave Integrated Circuits
  • Monolithic Microwave Integrated Circuits
  • Radio Frequency
  • Three Dimensional

Readers

  • Electronics Engineering
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics