0.15-micron Gallium Nitride (GaN) Microwave Integrated Circuit Designs Submitted to TriQuint Semiconductor for Fabrication

Abstract

High-speed electronic circuits are needed for Army systems in communications, wireless sensors, imaging, and other systems. Gallium nitride (GaN) technology offers the highest power densities for radio frequency (RF) and wireless integrated circuits. Several GaN broadband high power efficient power amplifier designs for high frequency operation, such as satellite communications (SATCOM), were recently designed and submitted for fabrication using a proprietary 0.15-micrometer GaN process under development at TriQuint Semiconductor. These monolithic microwave integrated circuits (MMICs) are being fabricated by TriQuint as part of a recent cooperative research and development agreement (CRADA) with the U.S. Army Research Laboratory (ARL).

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2012
Accession Number
ADA570172

Entities

People

  • John Penn

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors
  • Space

DTIC Thesaurus Topics

  • Amplifiers
  • Artificial Satellites
  • Bandwidth
  • Broadband
  • Circuits
  • Compound Semiconductors
  • Computer-Aided Design
  • Electronics Laboratories
  • Fabrication
  • Frequency
  • Gallium Nitrides
  • Integrated Circuits
  • Microwave Integrated Circuits
  • Monolithic Microwave Integrated Circuits
  • Power Amplifiers
  • Radio Frequency
  • Semiconductors

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Space