Process Dependence of H Passivation and Doping in H-implanted ZnO
Abstract
We used depth-resolved cathodoluminescence spectroscopy (DRCLS), photoluminescence (PL) spectroscopy and temperature-dependent Hall-effect (TDHE) measurements to describe the strong dependence of H passivation and doping in H-implanted ZnO on thermal treatment. Increasing H implantation dose increases passivation of Zn and oxygen vacancy-related defects, while reducing deep level emissions. Over annealing temperatures of 100-400 deg C at different times, 1 h annealing at 200 deg C yielded the lowest DRCLS deep level emissions highest TDHE carrier mobility, and highest near band-edge PL emission. These results describe the systematics of dopant implantation and thermal activation on H incorporation in ZnO and their effects on its electrical properties.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 04, 2013
- Accession Number
- ADA571058
Entities
People
- B. G. Svensson
- D. C. Look
- K. M. Johansen
- L. J. Brillson
- R. Schifano
- Zhicai Zhang
Organizations
- Air Force Research Laboratory