Determining the Presence of Ordering in Ternary Semiconductor Alloys Grown by Molecular Beam Epitaxy

Abstract

Some ternary semiconductor alloys spontaneously order during growth. We observe this phenomenon in some alloys grown for infrared (IR) applications by molecular beam epitaxy (MBE). Ordering can affect not only the crystal structure, but also important optical and electronic properties that ultimately affect a material's suitability for IR device applications. It is important to be aware of the presence of ordering, which is not usually detectable by the standard (004) x-ray diffraction (XRD) measurements typically used as a simple measurement of film quality.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2013
Accession Number
ADA571096

Entities

People

  • Stefan P. Svensson
  • Wendy L. Sarney

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Structure
  • Crystals
  • Diffraction
  • Electron Microscopy
  • Elements
  • Epitaxial Growth
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Semiconductors
  • Silicon Carbide
  • Standards
  • Transmission Electron Microscopy
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics