Lifetime Measurement of HgCdTe Semiconductor Material

Abstract

Mercury cadmium telluride (HgCdTe) is a semiconductor used for detecting infrared radiation. An important method for electrical characterization of HgCdTe is the measurement of minority carrier lifetime using the photoconductive decay method. This experiment was conducted to analyze the minority carrier lifetime of passivated and unpassivated samples of HgCdTe. The lifetimes of the two samples of HgCdTe were measured using a pulse generator, an auto tuning temperature controller, acryostat, a laser, an oscilloscope, and a computer. The lifetime was measured from 80 K to 300 K. A longer lifetime of minority carriers in HgCdTe is desirable for sensing applications.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2012
Accession Number
ADA571227

Entities

People

  • James Pattison
  • Uvin Ranawake

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors
  • Space
  • Weapons Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Charge Carriers
  • Compound Semiconductors
  • Detectors
  • Energy Bands
  • Equations
  • Infrared Radiation
  • Materials
  • Measurement
  • Minority Groups
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Oscilloscopes
  • Pulse Generators
  • Radiation
  • Semiconductors
  • Tellurides

Fields of Study

  • Materials science

Readers

  • Image Processing and Computer Vision.
  • Molecular Photonics/Laser Physics
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Microelectronics