Boron Nitride Substrates for High Mobility Chemical Vapor Deposited Graphene

Abstract

Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we achieve mobilities as high as 37 000 cm(expn 20)/ V s, an order of magnitude higher than commonly reported for CVD graphene and better than most exfoliated graphene. This result demonstrates that the barrier to scalable, high mobility CVD graphene is not the growth technique but rather the choice of a substrate that minimizes carrier scattering.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 13, 2011
Accession Number
ADA571868

Entities

People

  • A. Zettl
  • K. Watanabe
  • M. F. Crommie
  • Takashi Taniguchi
  • W. Gannett
  • William Regan

Organizations

  • University of California, Berkeley

Tags

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Vapor Deposition
  • Electron Beam Lithography
  • Electron Microscopy
  • Electron Mobility
  • Electrons
  • Fabrication
  • Graphene
  • Materials
  • Materials Science
  • Measurement
  • Microscopy
  • Mobility
  • Physics
  • Production Engineering
  • Scattering
  • Substrates

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene