Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers

Abstract

A broadband power amplifier design approach was used to design several monolithic microwave integrated circuits (MMICs) using a 0.13- m gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) process from TriQuint Semiconductor. The design and fabrication of these circuits were performed as part of the fall 2011 Johns Hopkins University (JHU) MMIC Design Course, taught by the author. The design approach is taught by Dale Dawson in the JHU Power MMIC Design Course. This approach is useful for designing relatively broadband amplifiers that are limited only be the active transistor s Q .

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2012
Accession Number
ADA571906

Entities

People

  • John E. Penn

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Broadband
  • Circuits
  • Compound Semiconductors
  • Electron Mobility
  • Electrons
  • Elements
  • Frequency
  • Gallium
  • Gallium Arsenides
  • High Electron Mobility Transistors
  • Integrated Circuits
  • Microwave Integrated Circuits
  • Monolithic Microwave Integrated Circuits
  • Power Amplifiers
  • Semiconductors

Readers

  • Integrated Circuit Design and Technology.
  • Military History
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics