Model for Ultrafast Carrier Scattering in Semiconductors
Abstract
One of the major products the AF is looking for is a lightweight, reconfigurable electro-optic sensor system. Towards that end, we are investigating the possibilities of incorporating a protection layer, an optical signal amplification layer, a detection layer, a solid-state cooling layer, and a readout electronics layer all monolithically integrated within a single pixel of a semiconductor focal plane array (for vast reductions in size and weight). When completed, the microscopic theory that arises from this project will be applicable to each of the various layers of the super-pixel device for both further understanding of the quantum mechanical processes involved, as well as for greatly improving the performance of each layer. This theory will be applied to quantum-kinetic studies of laser damage of semiconductor photodetectors, in order to describe and understand all radiation damage mechanisms so that methods of mitigation can be developed for the protection layer of the monolithic sensor. This theory will be applied to describing and predicting the optical control of scattering-induced dephasing for optical signal amplification in photodetectors using electronic quantum interference, as well as for noise reduction in both detectors and electronics. This theory will be applied to the photo-carrier generation and transport processes involved within the detection layer, for improving performance by minimizing dark-current noise. This theory has already been applied to photoluminescent cooling of detectors; a vibrationless, low-cost, extremely low-volume and weight on-chip solid-state cryogenic cooling scheme for space sensors. Finally, this theory will be applicable to high-power and ultrafast electronics development.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 14, 2012
- Accession Number
- ADA571944
Entities
People
- Danhong Huang
- David Cardimona
Organizations
- Air Force Research Laboratory