Development of Advanced Ill-Nitride Materials

Abstract

This new AFOSR program is focused on basic issues in the growth of advanced GaN and InN-based materials by molecular beam epitaxy (MBE). Work is focused on three areas: (i) extend on our pioneering work on high temperature nitrogen-rich growth of GaN, where we have demonstrated a new growth space for realizing high quality GaN materials and devices including world record room bulk electron mobility in GaN by MOCVD or MBE; (ii) continue our work on InN and its alloys with a particular emphasis on realizing p-type doping, p-n junctions, and InGaN/InN quantum well structures for terahertz emitters; and (iii) develop AlInN materials lattice-matched to GaN for advanced optoelectronic emitters and electron devices.

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Document Details

Document Type
Technical Report
Publication Date
Sep 24, 2008
Accession Number
ADA573445

Entities

People

  • James S. Speck

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Diffraction
  • Electron Diffraction
  • Electron Microscopes
  • Electron Microscopy
  • Electron Mobility
  • Energy Bands
  • Epitaxial Growth
  • Mass Spectrometry
  • Materials
  • Microscopy
  • Molecular Beam Epitaxy
  • Scattering
  • Three Dimensional
  • Transmission Electron Microscopy
  • Transport Properties
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Space