A Method for Atomic Layer Deposition of Complex Oxide Thin Films
Abstract
Advanced technologies derive many of their capabilities from the advanced materials that they are made from. Complex oxides are a class of materials which are driving technological advancement in a host of different directions. These highly functional materials have a great variety of useful properties, which can be chosen and even engineered. Advanced materials require advanced deposition methods. Atomic layer deposition (ALD), a variant of chemical vapor deposition (CVD), is gaining more use in industry for its ability to provide ultra-high film thickness resolution (down to 0.1 nm), capability to conformally coat three-dimensional structures, and its high uniformity across large surface areas. Additionally, ALD processes provide a possibility to improve economic and environmental viability of the process as compared to CVD by using and wasting less toxic reactants and expelling fewer nano-particulate byproducts. ALD processes are highly mature for many binary oxides commonly used in the semiconductor industries, however processes for depositing heavy metal oxides and complex oxides--oxides containing two or more separate metallic cations-- are sorely lacking in literature.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 2012
- Accession Number
- ADA573951
Entities
People
- Brian R. Beatty
Organizations
- Drexel University