Materials Growth for InAs High Electron Mobility Transistors and Circuits
Abstract
High electron mobility transistors (HEMTs) with InAs channels and antimonide barriers were grown by molecular beam epitaxy. Both Si and Te were successfully employed as n-type dopants. Sheet resistances of 90 150 Omega/square were routinely achieved on a variety of heterostructures with nonuniformities as low as 1.5% across a 75 mm wafer. X-ray diffraction measurements show that the InAs channels are in tension, coherently strained to the Al(Ga)Sb buffer layers. Atomic force microscopy measurements demonstrate that the surfaces are relatively smooth, with rms roughness of 8 26 over a 5x5 micrometer2 area. These results demonstrate that the growth of InAs HEMTs has progressed to the point that the fabrication of circuits should be feasible.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 2004
- Accession Number
- ADA573971
Entities
People
- Brad P. Tinkham
- Brian R. Bennett
- Michael D. Lange
- Roger Tsai
- Ronaldd D. Schrimpf
Organizations
- United States Naval Research Laboratory