1/f Noise in Single-Walled Carbon Nanotube Devices

Abstract

We report the scaling behavior of 1/ f noise in single-walled carbon nanotube devices. In this study we use two-dimensional carbon nanotube networks to explore the geometric scaling of 1/ f noise and find that for devices of a given resistance the noise scales inversely with device size. We have established an empirical formula that describes this behavior over a wide range of device parameters that can be used to assess the noise characteristics of carbon nanotube-based electronic devices and sensors.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2004
Accession Number
ADA573975

Entities

People

  • E. S. Snow
  • Frank Keith Perkins
  • J. P. Novak
  • M. D. Lay

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbon Nanotubes
  • Copyrights
  • Detectors
  • Electrodes
  • Field Emission
  • Films
  • Fullerenes
  • Law
  • Low Noise
  • Materials
  • Military Research
  • Noise
  • Resistance
  • Spectrum Analyzers
  • Thin Film Transistors
  • Thin Films
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Acoustics.
  • Computational Modeling and Simulation
  • Nanocomposite Materials Science

Technology Areas

  • Microelectronics