High-mobility Carbon-nanotube Thin-film Transistors on a Polymeric Substrate

Abstract

We report the development of high-mobility carbon-nanotube thin-film transistors fabricated on a polymeric substrate. The active semiconducting channel in the devices is composed of a random two-dimensional network of single-walled carbon nanotubes (SWNTs). The devices exhibit a field-effect mobility of 150 cm2 /Vs and a normalized transconductance of 0.5 mS/mm. The ratio of on-current (I(on)) to off-current (I(off)) is ~100 and is limited by metallic SWNTs in the network. With electronic purification of the SWNTs and improved gate capacitance we project that the transconductance can be increased to ~10 100 mS/mm with a significantly higher value of I(on)/ I(off), thus approaching crystalline semiconductor-like performance on polymeric substrates.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2005
Accession Number
ADA573996

Entities

People

  • E. S. Snow
  • J. P. Novak
  • Mario G. Ancona
  • P. M. Campbell

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Carbon Nanotubes
  • Electron Beams
  • Electron Mobility
  • Electronics
  • Electrons
  • Films
  • Fullerenes
  • Materials
  • Materials Laboratories
  • Mobility
  • Nanomaterials
  • Semiconductors
  • Substrates
  • Thin Film Transistors
  • Thin Films
  • Transistors

Fields of Study

  • Materials science

Readers

  • Nanocomposite Materials Science
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics