Stress-driven Formation of Si Nanowires

Abstract

We present an alternate mechanism for the growth of Si nanowires directly from a silicon substrate, without the use of a metal catalyst, silicon vapor or chemical vapor deposition (CVD) gasses. Since the silicon wires grow directly from the silicon substrate, they do not need to be manipulated or aligned for subsequent applications. Wires in the 20 50 nm diameter range with lengths over 80 mm can be easily grown by this technique. The critical parameters in the growth of these nanowires are the surface treatment and the carrier gas used. A model is proposed involving stress-driven wire growth, which is enhanced by surface Si atom diffusion due to the presence of hydrogen gas.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2005
Accession Number
ADA573998

Entities

People

  • Sharka M. Prokes
  • Stephen Arnold

Organizations

  • United States Naval Research Laboratory

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Electron Microscopy
  • Field Effect Transistors
  • Films
  • High Density
  • High Temperature
  • Materials
  • Materials Processing
  • Nanomaterials
  • Nanowires
  • Physical Properties
  • Scanning Electron Microscopy
  • Semiconductors
  • Stresses
  • Tensile Stress
  • Thermal Expansion
  • Thin Films

Readers

  • Materials Science (Mechanical Engineering).
  • Nanoscale Plasmonic Nanotechnology
  • Surface Engineering/Surface Coating Technology.