Si-assisted Growth of InAs Nanowires

Abstract

The authors report on the growth of InAs nanowires using nanometer-sized Si clusters in a closed system without any metal catalyst. The growth was performed at 580 C for 30 min using 1.3 nm thickness of SiOx. It is suggested that the nanowire growth occurred due to highly reactive nanometer-sized Si clusters, which are formed by phase separation of SiOx. The authors have also examined the vapor-liquid-solid (VLS) mechanism under various oxidizing conditions, including different oxygen pressures (200 and 800 mTorr) and oxidized Au In tip. The results indicate the inhibiting effect of oxygen on the VLS mechanism.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2006
Accession Number
ADA574000

Entities

People

  • Anne-claire Gaillot
  • Hyun D. Park
  • M. E. Twigg
  • Robert C. Cammarata
  • Sharka M. Prokes

Organizations

  • United States Naval Research Laboratory

Tags

DTIC Thesaurus Topics

  • Alloys
  • Backfills
  • Base Pressure
  • Catalysts
  • Copyrights
  • Diffusion
  • Electron Diffraction
  • Electron Microscopes
  • High Temperature
  • Liquids
  • Materials
  • Nanoparticles
  • Nanowires
  • Particles
  • Phase
  • Phase Separation
  • Scanning Electron Microscopes

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Surface Engineering/Surface Coating Technology.