Narrow Band Gap InGaSb, InAlAsSb Alloys for Electronic Devices

Abstract

Solid source molecular beam epitaxy has been used to grow random alloy quaternary InAlAsSb and ternary InGaSb alloys with a 6.2 lattice constant for use in electronic devices such as p-n junctions and heterojunction bipolar transistors (HBTs). Several p-n hetrojunctions composed of p-type InGaSb and one of several different n-type InAlAsSb alloys have been fabricated and show good rectification with ideality factors near one. In addition, several of these alloys have been used to make an n-p-n HBT that has demonstrated a dc current gain of 25.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2006
Accession Number
ADA574002

Entities

People

  • B. P. Tinkham
  • Evan R. Glaser
  • J. G. Champlain
  • Mario G. Ancona
  • P. M. Campbell
  • Richard Magno
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Bipolar Junction Transistors
  • Conduction Bands
  • Current Density
  • Electron Mobility
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • P-N Junctions
  • Semiconductors
  • Transistors
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics